Industrial and Intellectual Property

  • High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs [2017]

    Category:
    Ponencias
    Authors:
    Alberto Castellazzi , Emre Gurpinar , Jorge García García
    Date:
    01 of January of 2017
    It Is a Part of:
    32nd IEEE Annual Applied Power Electronics Conference and Exposition (APEC)